Silicon Carbide Discrete Devices Latest Market Report 2025
公開 2025/07/30 12:00
最終更新
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On Jul 30, Global Info Research released "Global Silicon Carbide Discrete Devices Market 2025 by Manufacturers, Regions, Type and Application, Forecast to 2031". This report includes an overview of the development of the Silicon Carbide Discrete Devices industry chain, the market status of Silicon Carbide Discrete Devices Market, and key enterprises in developed and developing market, and analysed the cutting-edge technology, patent, hot applications and market trends of Silicon Carbide Discrete Devices.
According to our (Global Info Research) latest study, the global Silicon Carbide Discrete Devices market size was valued at US$ 4012 million in 2024 and is forecast to a readjusted size of USD 13530 million by 2031 with a CAGR of 19.2% during review period.
In this report, we will assess the current U.S. tariff framework alongside international policy adaptations, analyzing their effects on competitive market structures, regional economic dynamics, and supply chain resilience.
This report studies discrete silicon carbide (SiC) power devices, include Silicon Carbide MOSFET Discretes, Silicon Carbide Diodes and Others (SiC JFETs & FETs).
Silicon carbide MOSFETs have the characteristics of low on-resistance and small switching losses, which can reduce device losses and improve system efficiency, and are more suitable for high-frequency circuits. It is widely used in the fields of new energy vehicle motor controller, vehicle power supply, solar inverter, charging pile, UPS, PFC power supply and other fields.
A silicon carbide (SiC) schottky diode is a semiconductor diode formed by the junction of a semiconductor with a metal. SiC Schottky barrier diodes have a much lower reverse leakage current than their Si counterparts and also a higher forward voltage. They significantly reduce losses and can therefore be used to increase system efficiency and reduce product size.
Currently automotive is the largest application of discrete SiC power devices. driven by demand from China, UAS, EU, and Japan. China is one of the world’s largest automotive markets, and its growth potential remains high. In particular, high rates of growth for electric-powered vehicles make China one of the largest markets for electromobility.
Global new energy vehicles continue to grow rapidly. In 2023, the total sales of new energy vehicles in the world reached 14.65 million, a simultaneous increase of 35.4%. Among them, China's new energy vehicle sales reached 9.495 million, accounting for 64.8% of global sales. The production and sales of new energy vehicles have ranked first in the world for eight consecutive years. In 2023, the sales of new energy vehicles in the United States and Europe were 2.94 million and 1.46 million respectively, with year-on-year growth rates of 18.3% and 48.0% respectively.
This report is a detailed and comprehensive analysis for global Silicon Carbide Discrete Devices market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Sample Report Request Silicon Carbide Discrete Devices
https://www.globalinforesearch.com/reports/2780398/silicon-carbide-discrete-devices
Market segment by Type: SiC MOSFET、 SiC Diode、 SIC Module
Market segment by Application: Automotive & EV/HEV、 EV Charging、 Industrial Motor/Drive、 PV, Energy Storage, Wind Power、 UPS, Data Center & Server、 Rail Transport、 Others
Major players covered: STMicroelectronics、 Infineon、 Wolfspeed、 Rohm、 onsemi、 BYD Semiconductor、 Microchip (Microsemi)、 Mitsubishi Electric (Vincotech)、 Semikron Danfoss、 Fuji Electric、 Navitas (GeneSiC)、 Toshiba、 Qorvo (UnitedSiC)、 San'an Optoelectronics、 Littelfuse (IXYS)、 CETC 55、 WeEn Semiconductors、 BASiC Semiconductor、 SemiQ、 Diodes Incorporated、 SanRex、 Alpha & Omega Semiconductor、 Bosch、 KEC Corporation、 PANJIT Group、 Nexperia、 Vishay Intertechnology、 Zhuzhou CRRC Times Electric、 China Resources Microelectronics Limited、 StarPower、 Yangzhou Yangjie Electronic Technology、 Guangdong AccoPower Semiconductor、 Changzhou Galaxy Century Microelectronics、 Hangzhou Silan Microelectronics、 Cissoid、 SK powertech、 InventChip Technology、 Hebei Sinopack Electronic Technology、 Oriental Semiconductor、 Jilin Sino-Microelectronics、 PN Junction Semiconductor (Hangzhou)、 United Nova Technology
Market segment by region, regional analysis covers: North America (United States, Canada and Mexico), Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe), Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia),South America (Brazil, Argentina, Colombia, and Rest of South America),Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa).
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe Silicon Carbide Discrete Devices product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of Silicon Carbide Discrete Devices, with price, sales, revenue and global market share of Silicon Carbide Discrete Devices from 2020 to 2025.
Chapter 3, the Silicon Carbide Discrete Devices competitive situation, sales quantity, revenue and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the Silicon Carbide Discrete Devices breakdown data are shown at the regional level, to show the sales quantity, consumption value and growth by regions, from 2020 to 2031.
Chapter 5 and 6, to segment the sales by Type and application, with sales market share and growth rate by type, application, from 2020 to 2031.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value and market share for key countries in the world, from 2020 to 2024.and Silicon Carbide Discrete Devices market forecast, by regions, type and application, with sales and revenue, from 2025 to 2031.
Chapter 12, market dynamics, drivers, restraints, trends and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of Silicon Carbide Discrete Devices.
Chapter 14 and 15, to describe Silicon Carbide Discrete Devices sales channel, distributors, customers, research findings and conclusion.
Data Sources:
Via authorized organizations:customs statistics, industrial associations, relevant international societies, and academic publications etc.
Via trusted Internet sources.Such as industry news, publications on this industry, annual reports of public companies, Bloomberg Business, Wind Info, Hoovers, Factiva (Dow Jones & Company), Trading Economics, News Network, Statista, Federal Reserve Economic Data, BIS Statistics, ICIS, Companies House Documentsm, investor presentations, SEC filings of companies, etc.
Via interviews. Our interviewees includes manufacturers, related companies, industry experts, distributors, business (sales) staff, directors, CEO, marketing executives, executives from related industries/organizations, customers and raw material suppliers to obtain the latest information on the primary market;
Via data exchange. We have been consulting in this industry for 16 years and have collaborations with the players in this field. Thus, we get access to (part of) their unpublished data, by exchanging with them the data we have.
From our partners.We have information agencies as partners and they are located worldwide, thus we get (or purchase) the latest data from them.
Via our long-term tracking and gathering of data from this industry.We have a database that contains history data regarding the market.
About Us:
Global Info Research
Web: https://www.globalinforesearch.com
CN: 0086-176 6505 2062
HK: 00852-58030175
US: 001-347 966 1888
Email: report@globalinforesearch.com
Global Info Research is a company that digs deep into global industry information to support enterprises with market strategies and in-depth market development analysis reports. We provides market information consulting services in the global region to support enterprise strategic planning and official information reporting, and focuses on customized research, management consulting, IPO consulting, industry chain research, database and top industry services. At the same time, Global Info Research is also a report publisher, a customer and an interest-based suppliers, and is trusted by more than 30,000 companies around the world. We will always carry out all aspects of our business with excellent expertise and experience.
According to our (Global Info Research) latest study, the global Silicon Carbide Discrete Devices market size was valued at US$ 4012 million in 2024 and is forecast to a readjusted size of USD 13530 million by 2031 with a CAGR of 19.2% during review period.
In this report, we will assess the current U.S. tariff framework alongside international policy adaptations, analyzing their effects on competitive market structures, regional economic dynamics, and supply chain resilience.
This report studies discrete silicon carbide (SiC) power devices, include Silicon Carbide MOSFET Discretes, Silicon Carbide Diodes and Others (SiC JFETs & FETs).
Silicon carbide MOSFETs have the characteristics of low on-resistance and small switching losses, which can reduce device losses and improve system efficiency, and are more suitable for high-frequency circuits. It is widely used in the fields of new energy vehicle motor controller, vehicle power supply, solar inverter, charging pile, UPS, PFC power supply and other fields.
A silicon carbide (SiC) schottky diode is a semiconductor diode formed by the junction of a semiconductor with a metal. SiC Schottky barrier diodes have a much lower reverse leakage current than their Si counterparts and also a higher forward voltage. They significantly reduce losses and can therefore be used to increase system efficiency and reduce product size.
Currently automotive is the largest application of discrete SiC power devices. driven by demand from China, UAS, EU, and Japan. China is one of the world’s largest automotive markets, and its growth potential remains high. In particular, high rates of growth for electric-powered vehicles make China one of the largest markets for electromobility.
Global new energy vehicles continue to grow rapidly. In 2023, the total sales of new energy vehicles in the world reached 14.65 million, a simultaneous increase of 35.4%. Among them, China's new energy vehicle sales reached 9.495 million, accounting for 64.8% of global sales. The production and sales of new energy vehicles have ranked first in the world for eight consecutive years. In 2023, the sales of new energy vehicles in the United States and Europe were 2.94 million and 1.46 million respectively, with year-on-year growth rates of 18.3% and 48.0% respectively.
This report is a detailed and comprehensive analysis for global Silicon Carbide Discrete Devices market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Sample Report Request Silicon Carbide Discrete Devices
https://www.globalinforesearch.com/reports/2780398/silicon-carbide-discrete-devices
Market segment by Type: SiC MOSFET、 SiC Diode、 SIC Module
Market segment by Application: Automotive & EV/HEV、 EV Charging、 Industrial Motor/Drive、 PV, Energy Storage, Wind Power、 UPS, Data Center & Server、 Rail Transport、 Others
Major players covered: STMicroelectronics、 Infineon、 Wolfspeed、 Rohm、 onsemi、 BYD Semiconductor、 Microchip (Microsemi)、 Mitsubishi Electric (Vincotech)、 Semikron Danfoss、 Fuji Electric、 Navitas (GeneSiC)、 Toshiba、 Qorvo (UnitedSiC)、 San'an Optoelectronics、 Littelfuse (IXYS)、 CETC 55、 WeEn Semiconductors、 BASiC Semiconductor、 SemiQ、 Diodes Incorporated、 SanRex、 Alpha & Omega Semiconductor、 Bosch、 KEC Corporation、 PANJIT Group、 Nexperia、 Vishay Intertechnology、 Zhuzhou CRRC Times Electric、 China Resources Microelectronics Limited、 StarPower、 Yangzhou Yangjie Electronic Technology、 Guangdong AccoPower Semiconductor、 Changzhou Galaxy Century Microelectronics、 Hangzhou Silan Microelectronics、 Cissoid、 SK powertech、 InventChip Technology、 Hebei Sinopack Electronic Technology、 Oriental Semiconductor、 Jilin Sino-Microelectronics、 PN Junction Semiconductor (Hangzhou)、 United Nova Technology
Market segment by region, regional analysis covers: North America (United States, Canada and Mexico), Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe), Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia),South America (Brazil, Argentina, Colombia, and Rest of South America),Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa).
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe Silicon Carbide Discrete Devices product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of Silicon Carbide Discrete Devices, with price, sales, revenue and global market share of Silicon Carbide Discrete Devices from 2020 to 2025.
Chapter 3, the Silicon Carbide Discrete Devices competitive situation, sales quantity, revenue and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the Silicon Carbide Discrete Devices breakdown data are shown at the regional level, to show the sales quantity, consumption value and growth by regions, from 2020 to 2031.
Chapter 5 and 6, to segment the sales by Type and application, with sales market share and growth rate by type, application, from 2020 to 2031.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value and market share for key countries in the world, from 2020 to 2024.and Silicon Carbide Discrete Devices market forecast, by regions, type and application, with sales and revenue, from 2025 to 2031.
Chapter 12, market dynamics, drivers, restraints, trends and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of Silicon Carbide Discrete Devices.
Chapter 14 and 15, to describe Silicon Carbide Discrete Devices sales channel, distributors, customers, research findings and conclusion.
Data Sources:
Via authorized organizations:customs statistics, industrial associations, relevant international societies, and academic publications etc.
Via trusted Internet sources.Such as industry news, publications on this industry, annual reports of public companies, Bloomberg Business, Wind Info, Hoovers, Factiva (Dow Jones & Company), Trading Economics, News Network, Statista, Federal Reserve Economic Data, BIS Statistics, ICIS, Companies House Documentsm, investor presentations, SEC filings of companies, etc.
Via interviews. Our interviewees includes manufacturers, related companies, industry experts, distributors, business (sales) staff, directors, CEO, marketing executives, executives from related industries/organizations, customers and raw material suppliers to obtain the latest information on the primary market;
Via data exchange. We have been consulting in this industry for 16 years and have collaborations with the players in this field. Thus, we get access to (part of) their unpublished data, by exchanging with them the data we have.
From our partners.We have information agencies as partners and they are located worldwide, thus we get (or purchase) the latest data from them.
Via our long-term tracking and gathering of data from this industry.We have a database that contains history data regarding the market.
About Us:
Global Info Research
Web: https://www.globalinforesearch.com
CN: 0086-176 6505 2062
HK: 00852-58030175
US: 001-347 966 1888
Email: report@globalinforesearch.com
Global Info Research is a company that digs deep into global industry information to support enterprises with market strategies and in-depth market development analysis reports. We provides market information consulting services in the global region to support enterprise strategic planning and official information reporting, and focuses on customized research, management consulting, IPO consulting, industry chain research, database and top industry services. At the same time, Global Info Research is also a report publisher, a customer and an interest-based suppliers, and is trusted by more than 30,000 companies around the world. We will always carry out all aspects of our business with excellent expertise and experience.
Global info Research is a report publisher that focuses on collecting global industry information, mainly providing market strategy analysis for enterprises and helping users understand industry development opportunities. It focuses on industry research, market share analysis, market share, customi…
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